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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Number Of Elements
- 1
- Montaj Tipi
- Through Hole
- Yayın Yılı
- 1998
- Dc Current Gain Hfe Min Ic Vce
- 180 @ 100mA 3V
- Qualification Status
- Not Qualified
- JESD-609 Kodu
- e1
- Max Power Dissipation
- 1W
- Tepe Reflow Sıcaklığı (°C)
- 260
- Transistor Element Material
- SILICON
- Çalışma Sıcaklığı
- 150°C TJ
- Tepe Reflow Süresi (maks. sn)
- 10
- Transition Frequency
- 150MHz
- Current Collector Cutoff Max
- 500nA ICBO
- Polaritychannel Type
- NPN
- Collector Emitter Voltage Vceo
- 400mV
- RoHS Durumu
- ROHS3 Compliant
- Collectoremitter Breakdown Voltage
- 32V
- Collector Base Voltage Vcbo
- 40V
- Montaj
- Through Hole
- Gain Bandwidth Product
- 150MHz
- Akım Değeri
- 1A
- Parça Durumu
- Obsolete
- Terminal Kaplaması
- TIN SILVER COPPER
- Vce Saturation Max Ib Ic
- 400mV @ 50mA, 500mA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Hfemin
- 180
- Kurşunsuz Kodu
- yes
- Jesd30 Code
- R-PSIP-T3
- Element Configuration
- Single
- Terminal Sayısı
- 3
- Transistor Type
- NPN
- Pin Sayısı
- 3
- ECCN Kodu
- EAR99
- Emitter Base Voltage Vebo
- 5V
- Max Collector Current
- 1A
- Kılıf / Paket
- 3-SIP
- Voltage Rated Dc
- 32V
- Ambalaj
- Tape & Box (TB)
- Transistor Application
- SWITCHING
- Kurşunsuz
- Lead Free
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