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Specifications
- Transistor Element Material
- SILICON
- Çalışma Sıcaklığı
- 150°C TJ
- ECCN Kodu
- EAR99
- Fabrika Tedarik Süresi
- 13 Weeks
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Sayısı
- 3
- Transistor Type
- NPN
- Hfemin
- 120
- Kurşunsuz Kodu
- yes
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Gain Bandwidth Product
- 150MHz
- Vcesatmax
- 0.4 V
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Kurşunsuz
- Lead Free
- Max Collector Current
- 800mA
- Ambalaj
- Tape & Reel (TR)
- Max Breakdown Voltage
- 32V
- Contact Plating
- Copper, Silver, Tin
- Terminal Pozisyonu
- DUAL
- Reach Svhc
- No SVHC
- Tepe Reflow Sıcaklığı (°C)
- 260
- Collectoremitter Saturation Voltage
- 100mV
- Terminal Formu
- GULL WING
- Radyasyon Dayanımı
- No
- Montaj
- Surface Mount
- Tepe Reflow Süresi (maks. sn)
- 10
- HTS Kodu
- 8541.21.00.75
- Parça Durumu
- Active
- JESD-609 Kodu
- e1
- Transistor Application
- AMPLIFIER
- Transition Frequency
- 150MHz
- Continuous Collector Current
- 800mA
- Akım Değeri
- 800mA
- Collector Emitter Voltage Vceo
- 32V
- Temel Parça No
- 2SD1781
- Number Of Elements
- 1
- Collectoremitter Breakdown Voltage
- 32V
- Pin Sayısı
- 3
- Voltage Rated Dc
- 32V
- Element Configuration
- Single
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