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Rohm Semiconductor

2SCR583D3FRATL

Single BJT Transistors

RoHS: Compliant

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Specifications

Collectoremitter Saturation Voltage
160 mV
Çalışma Sıcaklığı
150°C (TJ)
Power Max
10 W
Configuration
Single
Dc Collectorbase Gain Hfe Min
180 at 1 A, 3 V
Transistor Polarity
NPN
Transistor Type
NPN
Montaj Stili
SMD/SMT
Continuous Collector Current
7 A
Maximum Collector Emitter Voltage
50 V
Voltage Collector Emitter Breakdown Max
50 V
Fabrika Paket Adedi
2500
Package Type
TO-252 (DPAK)
Ürün Durumu
Active
RoHS
Details
Kılıf / Paket
TO-252-3, DPak (2 Leads + Tab), SC-63
Currentcollector Ic Max
7 A
Technology
Si
Dc Current Gain Hfe Max
450 at 1 A, 3 V
Frequency Transition
280MHz
Collector Emitter Voltage Vceo Max
50 V
Collector Base Voltage Vcbo
50 V
Pd Power Dissipation
10 W
Current Collector Cutoff Max
1μA (ICBO)
Number Of Elements Per Chip
1
Tedarikçi Cihaz Paketi
TO-252
Emitter Base Voltage Vebo
6 V
Vce Saturation Max Ib Ic
350mV @ 150mA, 3A
Maks. Çalışma Sıcaklığı
+ 150 C
Ürün Tipi
BJTs - Bipolar Transistors
Montaj Tipi
Surface Mount
Ambalaj
MouseReel
Maximum Dc Collector Current
7 A
Dc Current Gain Hfe Min Ic Vce
180 @ 1A, 3V

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