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RoHS
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Specifications
- Dc Collectorbase Gain Hfe Min
- 180 at 0.5 A, 3 V
- Configuration
- Single
- Power Max
- 1 W
- Collectoremitter Saturation Voltage
- 150 mV
- Çalışma Sıcaklığı
- 150°C (TJ)
- Fabrika Paket Adedi
- 3000
- Voltage Collector Emitter Breakdown Max
- 50 V
- Transition Frequency
- 200MHz
- Continuous Collector Current
- 6A
- Power Dissipation
- 2.1W
- Montaj Stili
- SMD/SMT
- Transistor Type
- NPN
- Gain Bandwidth Product Ft
- 200 MHz
- Transistor Polarity
- NPN
- Collector Emitter Voltage Vceo Max
- 50 V
- Frequency Transition
- 200MHz
- Currentcollector Ic Max
- 6 A
- Technology
- Si
- Dc Current Gain Hfe Max
- 450 at 0.5 A, 3 V
- RoHS
- Details
- Kılıf / Paket
- 3-UDFN Exposed Pad
- Ürün Durumu
- Active
- Dc Current Gain Hfe Min Ic Vce
- 180 @ 500mA, 3V
- Maximum Dc Collector Current
- 6 A
- Ambalaj
- Cut Tape
- Montaj Tipi
- Surface Mount
- Ürün Tipi
- BJTs - Bipolar Transistors
- Tedarikçi Cihaz Paketi
- HUML2020L3
- Maks. Çalışma Sıcaklığı
- + 150 C
- Vce Saturation Max Ib Ic
- 350mV @ 150mA, 3A
- Emitter Base Voltage Vebo
- 6 V
- Collector Base Voltage Vcbo
- 50 V
- Pd Power Dissipation
- 1 W
- Current Collector Cutoff Max
- 1μA (ICBO)
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