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Technical team support
Specifications
- Transistor Type
- NPN
- Max Power Dissipation
- 200mW
- Number Of Elements
- 1
- Montaj Tipi
- Surface Mount
- Voltage Rated Dc
- 11V
- Gain Bandwidth Product
- 3.2 GHz
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Radyasyon Dayanımı
- No
- HTS Kodu
- 8541.21.00.75
- Transistor Element Material
- SILICON
- Collectorbase Capacitancemax
- 1.5pF
- Collectoremitter Breakdown Voltage
- 11V
- Contact Plating
- Copper, Silver, Tin
- Vcesatmax
- 0.5 V
- Highest Frequency Band
- S B
- Ambalaj
- Tape & Reel (TR)
- Kurşunsuz
- Lead Free
- Çalışma Sıcaklığı
- 150°C TJ
- Fabrika Tedarik Süresi
- 13 Weeks
- Pin Sayısı
- 3
- Continuous Collector Current
- 50mA
- Transition Frequency
- 3200MHz
- Vce Saturation Max Ib Ic
- 500mV @ 5mA, 10mA
- Terminal Sayısı
- 3
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Tepe Reflow Sıcaklığı (°C)
- 260
- Temel Parça No
- 2SC3838
- Terminal Formu
- GULL WING
- Max Collector Current
- 50mA
- Element Configuration
- Single
- Max Breakdown Voltage
- 11V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Tepe Reflow Süresi (maks. sn)
- 10
- Pin Sayısı
- 3
- Akım Değeri
- 50mA
- Dc Current Gain Hfe Min Ic Vce
- 56 @ 5mA 10V
- Parça Durumu
- Active
- Montaj
- Surface Mount
- ECCN Kodu
- EAR99
- Hfemin
- 56
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