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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Pozisyonu
- DUAL
- Collector Emitter Voltage Vceo
- 370mV
- Transistor Application
- AMPLIFIER
- Hfemin
- 270
- Çalışma Sıcaklığı
- 150°C TJ
- Emitter Base Voltage Vebo
- -6V
- Vce Saturation Max Ib Ic
- 370mV @ 50mA, 1A
- Dc Current Gain Hfe Min Ic Vce
- 270 @ 100mA 2V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Max Breakdown Voltage
- 30V
- Max Power Dissipation
- 400mW
- Kılıf / Paket
- 3-SMD, Flat Lead
- Max Collector Current
- 1.5A
- Montaj Tipi
- Surface Mount
- Montaj
- Surface Mount
- HTS Kodu
- 8541.21.00.75
- Kurşunsuz Kodu
- yes
- Collectoremitter Saturation Voltage
- -200mV
- Pin Sayısı
- 3
- ECCN Kodu
- EAR99
- Voltage Rated Dc
- -30V
- Akım Değeri
- -1.5A
- JESD-609 Kodu
- e2
- Temel Parça No
- 2SB1731
- Yayın Yılı
- 2007
- Contact Plating
- Copper, Tin
- Parça Durumu
- Active
- Number Of Elements
- 1
- Tepe Reflow Süresi (maks. sn)
- 10
- Continuous Collector Current
- -1.5A
- Terminal Kaplaması
- Tin/Copper (Sn/Cu)
- RoHS Durumu
- ROHS3 Compliant
- Transistor Element Material
- SILICON
- Polaritychannel Type
- PNP
- Power Max
- 400mW
- Transition Frequency
- 280MHz
- Collector Base Voltage Vcbo
- -30V
- Kurşunsuz
- Lead Free
- Fabrika Tedarik Süresi
- 13 Weeks
- Transistor Type
- PNP
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