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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Pozisyonu
- DUAL
- Transistor Application
- AMPLIFIER
- Collector Emitter Voltage Vceo
- 12V
- Power Dissipation
- 400mW
- Yayın Yılı
- 2007
- Temel Parça No
- 2SB1730
- Dc Current Gain Hfe Min Ic Vce
- 270 @ 200mA 2V
- Vce Saturation Max Ib Ic
- 180mV @ 50mA, 1A
- Hfemin
- 270
- Contact Plating
- Copper, Tin
- Parça Durumu
- Active
- Emitter Base Voltage Vebo
- 6V
- Tepe Reflow Süresi (maks. sn)
- 10
- Çalışma Sıcaklığı
- 150°C TJ
- Number Of Elements
- 1
- Transition Frequency
- 360MHz
- Polaritychannel Type
- PNP
- Transistor Element Material
- SILICON
- RoHS Durumu
- ROHS3 Compliant
- Terminal Kaplaması
- TIN COPPER
- Tepe Reflow Sıcaklığı (°C)
- 260
- Montaj Tipi
- Surface Mount
- Max Power Dissipation
- 400mW
- Max Breakdown Voltage
- 12V
- Max Collector Current
- 2A
- Kılıf / Paket
- 3-SMD, Flat Lead
- Collector Base Voltage Vcbo
- 15V
- Kurşunsuz
- Lead Free
- Kurşunsuz Kodu
- yes
- Element Configuration
- Single
- Gain Bandwidth Product
- 360MHz
- Current Collector Cutoff Max
- 100nA ICBO
- Fabrika Tedarik Süresi
- 13 Weeks
- Montaj
- Surface Mount
- Transistor Type
- PNP
- Pin Sayısı
- 3
- Collectoremitter Breakdown Voltage
- 12V
- Ambalaj
- Tape & Reel (TR)
- JESD-609 Kodu
- e2
- Frekans
- 360MHz
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