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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Tepe Reflow Sıcaklığı (°C)
- 260
- Terminal Kaplaması
- Tin/Copper (Sn98Cu2)
- RoHS Durumu
- ROHS3 Compliant
- Transistor Element Material
- SILICON
- Transition Frequency
- 12MHz
- Power Max
- 1W
- Number Of Elements
- 1
- Çalışma Sıcaklığı
- 150°C TJ
- Tepe Reflow Süresi (maks. sn)
- 10
- Emitter Base Voltage Vebo
- 7V
- Parça Durumu
- Not For New Designs
- Contact Plating
- Copper, Tin
- Hfemin
- 1000
- Vce Saturation Max Ib Ic
- 1.5V @ 4mA, 2A
- Dc Current Gain Hfe Min Ic Vce
- 1000 @ 2A 3V
- Yayın Yılı
- 2001
- Collector Emitter Voltage Vceo
- 80V
- Transistor Application
- AMPLIFIER
- Frequency Transition
- 12MHz
- Voltage Rated Dc
- -80V
- ECCN Kodu
- EAR99
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Akım Değeri
- -4A
- Pin Sayısı
- 63
- Terminal Sayısı
- 2
- Polarity
- PNP
- Radyasyon Dayanımı
- No
- JESD-609 Kodu
- e2
- Jesd30 Code
- R-PSSO-G2
- Vcesatmax
- 1.5 V
- Ambalaj
- Tape & Reel (TR)
- Pin Sayısı
- 3
- Collectoremitter Breakdown Voltage
- 80V
- Transistor Type
- PNP - Darlington
- Montaj
- Surface Mount
- HTS Kodu
- 8541.29.00.95
- Current Collector Cutoff Max
- 100μA ICBO
- Additional Feature
- BUILT-IN BIAS RESISTOR RATIO IS 0.1
- Case Connection
- COLLECTOR
- Element Configuration
- Single
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