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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transition Frequency
- 120MHz
- Power Max
- 2W
- Polaritychannel Type
- PNP
- Transistor Element Material
- SILICON
- RoHS Durumu
- ROHS3 Compliant
- Terminal Kaplaması
- TIN COPPER
- Tepe Reflow Süresi (maks. sn)
- 10
- Number Of Elements
- 1
- Parça Durumu
- Not For New Designs
- Contact Plating
- Copper, Tin
- Yayın Yılı
- 2004
- Temel Parça No
- 2SB1386
- Power Dissipation
- 500mW
- Radyasyon Dayanımı
- No
- Terminal Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Vcesatmax
- 1 V
- Collectoremitter Breakdown Voltage
- 20V
- Pin Sayısı
- 3
- Ambalaj
- Tape & Reel (TR)
- Gain Bandwidth Product
- 120MHz
- Current Collector Cutoff Max
- 500nA ICBO
- Element Configuration
- Single
- Transistor Type
- PNP
- Terminal
- SMD/SMT
- Collector Base Voltage Vcbo
- -30V
- Kurşunsuz
- Lead Free
- Tepe Reflow Sıcaklığı (°C)
- 260
- Dc Current Gain Hfe Min Ic Vce
- 180 @ 500mA 2V
- Vce Saturation Max Ib Ic
- 1V @ 100mA, 4A
- Emitter Base Voltage Vebo
- -6V
- Çalışma Sıcaklığı
- 150°C TJ
- Reach Svhc
- No SVHC
- Hfemin
- 82
- Transistor Application
- SWITCHING
- Collector Emitter Voltage Vceo
- 1V
- JESD-609 Kodu
- e2
- Akım Değeri
- -5A
- Voltage Rated Dc
- -20V
- ECCN Kodu
- EAR99
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