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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Dissipation
- 1W
- Temel Parça No
- 2SB1316
- Yayın Yılı
- 2004
- Contact Plating
- Copper, Tin
- Parça Durumu
- Active
- Number Of Elements
- 2
- Tepe Reflow Süresi (maks. sn)
- 10
- Genişlik
- 5.5mm
- Continuous Collector Current
- -2A
- Terminal Kaplaması
- Tin/Copper (Sn98Cu2)
- RoHS Durumu
- ROHS3 Compliant
- Transistor Element Material
- SILICON
- Transition Frequency
- 50MHz
- Collector Base Voltage Vcbo
- 100V
- Kurşunsuz
- Lead Free
- Terminal
- SMD/SMT
- Fabrika Tedarik Süresi
- 20 Weeks
- Transistor Type
- PNP - Darlington
- Element Configuration
- Single
- Current Collector Cutoff Max
- 10μA ICBO
- Gain Bandwidth Product
- 50MHz
- Jesd30 Code
- R-PSSO-G2
- Ambalaj
- Tape & Reel (TR)
- Collectoremitter Breakdown Voltage
- 100V
- Pin Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Radyasyon Dayanımı
- No
- Terminal Sayısı
- 2
- Uzunluk
- 6.5mm
- Collector Emitter Voltage Vceo
- 100V
- Transistor Application
- AMPLIFIER
- Hfemin
- 1000
- Reach Svhc
- No SVHC
- Çalışma Sıcaklığı
- 150°C TJ
- Emitter Base Voltage Vebo
- 8V
- Vce Saturation Max Ib Ic
- 1.5V @ 1mA, 1A
- Dc Current Gain Hfe Min Ic Vce
- 1000 @ 1A 2V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Yükseklik
- 2.3mm
- Max Breakdown Voltage
- 100V
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