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Support
Technical team support
Specifications
- Voltage Rated Dc
- -80V
- Terminal Sayısı
- 3
- Collector Emitter Voltage Vceo
- 500mV
- Dc Current Gain Hfe Min Ic Vce
- 180 @ 100mA 3V
- Max Breakdown Voltage
- 80V
- Transistor Type
- PNP
- Hfemin
- 120
- Vcesatmax
- 0.5 V
- Gain Bandwidth Product
- 180MHz
- Kurşunsuz
- Lead Free
- ECCN Kodu
- EAR99
- Radyasyon Dayanımı
- No
- Transistor Element Material
- SILICON
- Max Power Dissipation
- 200mW
- Kurşunsuz Kodu
- yes
- Vce Saturation Max Ib Ic
- 500mV @ 50mA, 500mA
- Transistor Application
- SWITCHING
- Yayın Yılı
- 1998
- Terminal Formu
- GULL WING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collectoremitter Breakdown Voltage
- 80V
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current
- 500mA
- Akım Değeri
- -500mA
- JESD-609 Kodu
- e1
- Çalışma Sıcaklığı
- 150°C TJ
- Montaj Tipi
- Surface Mount
- Power Max
- 200mW
- Collector Base Voltage Vcbo
- -80V
- Contact Plating
- Copper, Silver, Tin
- Continuous Collector Current
- -500mA
- Pin Sayısı
- 3
- Montaj
- Surface Mount
- Terminal Pozisyonu
- DUAL
- HTS Kodu
- 8541.21.00.75
- Current Collector Cutoff Max
- 500nA ICBO
- Transition Frequency
- 180MHz
- Tepe Reflow Sıcaklığı (°C)
- 260
- Collectoremitter Saturation Voltage
- -200mV
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