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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Application
- AMPLIFIER
- Yayın Yılı
- 2008
- Vce Saturation Max Ib Ic
- 500mV @ 50mA, 500mA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Formu
- GULL WING
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Collectoremitter Breakdown Voltage
- 32V
- Pin Sayısı
- 3
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Terminal Sayısı
- 3
- Collector Emitter Voltage Vceo
- 500mV
- Voltage Rated Dc
- -32V
- Max Breakdown Voltage
- 32V
- Vcesatmax
- 0.5 V
- Hfemin
- 120
- Transistor Type
- PNP
- Dc Current Gain Hfe Min Ic Vce
- 120 @ 100mA 3V
- ECCN Kodu
- EAR99
- Kurşunsuz
- Lead Free
- Gain Bandwidth Product
- 200MHz
- Transistor Element Material
- SILICON
- Max Power Dissipation
- 200mW
- Kurşunsuz Kodu
- yes
- Radyasyon Dayanımı
- No
- Emitter Base Voltage Vebo
- -5V
- Number Of Elements
- 1
- Transition Frequency
- 200MHz
- Tepe Reflow Sıcaklığı (°C)
- 260
- Ambalaj
- Tape & Reel (TR)
- Reach Svhc
- No SVHC
- Tepe Reflow Süresi (maks. sn)
- 10
- Element Configuration
- Single
- RoHS Durumu
- ROHS3 Compliant
- Temel Parça No
- 2SB1197
- Fabrika Tedarik Süresi
- 13 Weeks
- Polaritychannel Type
- PNP
- Parça Durumu
- Active
- Max Collector Current
- 800mA
- Çalışma Sıcaklığı
- 150°C TJ
- JESD-609 Kodu
- e1
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