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Specifications
- Collector Base Voltage Vcbo
- -80V
- Gain Bandwidth Product
- 120MHz
- Kurşunsuz
- Lead Free
- Max Power Dissipation
- 2W
- Kurşunsuz Kodu
- yes
- Current Collector Cutoff Max
- 500nA ICBO
- Transistor Element Material
- SILICON
- Montaj
- Surface Mount
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 4
- Continuous Collector Current
- -700mA
- Contact Plating
- Copper, Tin
- Collector Emitter Voltage Vceo
- 400mV
- Terminal Sayısı
- 3
- Voltage Rated Dc
- -80V
- Max Collector Current
- 700mA
- Montaj Tipi
- Surface Mount
- Hfemin
- 120
- Power Max
- 2W
- Transistor Type
- PNP
- Max Breakdown Voltage
- 80V
- Çalışma Sıcaklığı
- 150°C TJ
- JESD-609 Kodu
- e2
- Akım Değeri
- -700mA
- Dc Current Gain Hfe Min Ic Vce
- 120 @ 100mA 3V
- Terminal Kaplaması
- TIN COPPER
- Collectoremitter Breakdown Voltage
- 80V
- Frequency Transition
- 100MHz
- Temel Parça No
- 2SB1189
- Polaritychannel Type
- PNP
- Parça Durumu
- Not For New Designs
- Fabrika Tedarik Süresi
- 7 Weeks
- Kılıf / Paket
- TO-243AA
- Yayın Yılı
- 1998
- Jesd30 Code
- R-PSSO-F3
- Number Of Elements
- 1
- Emitter Base Voltage Vebo
- -5V
- Transistor Application
- SWITCHING
- Vce Saturation Max Ib Ic
- 400mV @ 50mA, 500mA
- Ambalaj
- Tape & Reel (TR)
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