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Genuine parts
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RoHS
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Support
Technical team support
Specifications
- Collector Base Voltage Vcbo
- 40V
- Gain Bandwidth Product
- 100MHz
- Kurşunsuz
- Lead Free
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Current Collector Cutoff Max
- 1μA ICBO
- Max Power Dissipation
- 500mW
- Contact Plating
- Copper, Tin
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 3
- Montaj
- Surface Mount
- Case Connection
- COLLECTOR
- Terminal Sayısı
- 3
- Collector Emitter Voltage Vceo
- 32V
- Voltage Rated Dc
- -32V
- Max Collector Current
- 2A
- JESD-609 Kodu
- e2
- Max Breakdown Voltage
- 32V
- Çalışma Sıcaklığı
- 150°C TJ
- Transistor Type
- PNP
- Montaj Tipi
- Surface Mount
- Hfemin
- 82
- Vcesatmax
- 0.8 V
- Akım Değeri
- -2A
- Dc Current Gain Hfe Min Ic Vce
- 180 @ 500mA 3V
- Terminal Kaplaması
- TIN COPPER
- Temel Parça No
- 2SB1188
- Collectoremitter Breakdown Voltage
- -32V
- Power Dissipation
- 2W
- Polaritychannel Type
- PNP
- Parça Durumu
- Not For New Designs
- Pin Sayısı
- 3
- Kılıf / Paket
- TO-243AA
- Transistor Application
- AMPLIFIER
- Emitter Base Voltage Vebo
- -5V
- Yayın Yılı
- 1997
- Number Of Elements
- 1
- Frekans
- 100MHz
- Tepe Reflow Sıcaklığı (°C)
- 260
- Transition Frequency
- 100MHz
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