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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vce Saturation Max Ib Ic
- 400mV @ 50mA, 500mA
- Yayın Yılı
- 2009
- Transistor Application
- SWITCHING
- Terminal Formu
- GULL WING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collectoremitter Breakdown Voltage
- 80V
- Terminal Kaplaması
- TIN COPPER
- Kılıf / Paket
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Pin Sayısı
- 3
- Power Dissipation
- 1W
- Voltage Rated Dc
- -80V
- Collector Emitter Voltage Vceo
- 400mV
- Terminal
- SMD/SMT
- Terminal Sayısı
- 2
- Dc Current Gain Hfe Min Ic Vce
- 120 @ 100mA 3V
- Hfemin
- 120
- Transistor Type
- PNP
- Max Breakdown Voltage
- 80V
- Gain Bandwidth Product
- 100MHz
- Kurşunsuz
- Lead Free
- Radyasyon Dayanımı
- No
- Max Power Dissipation
- 10W
- Kurşunsuz Kodu
- yes
- Transistor Element Material
- SILICON
- Ambalaj
- Tape & Reel (TR)
- Collectoremitter Saturation Voltage
- -400mV
- Tepe Reflow Sıcaklığı (°C)
- 260
- Jesd30 Code
- R-PSSO-G2
- Number Of Elements
- 1
- Emitter Base Voltage Vebo
- -5V
- Element Configuration
- Single
- RoHS Durumu
- ROHS3 Compliant
- Reach Svhc
- No SVHC
- Tepe Reflow Süresi (maks. sn)
- 10
- Temel Parça No
- 2SB1181
- Polaritychannel Type
- PNP
- Parça Durumu
- Not For New Designs
- Fabrika Tedarik Süresi
- 17 Weeks
- Max Collector Current
- 1A
- Akım Değeri
- -1A
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