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Same-day dispatch from stock
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Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yayın Yılı
- 2009
- Transistor Application
- AMPLIFIER
- Vce Saturation Max Ib Ic
- 500mV @ 50mA, 500mA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Formu
- FLAT
- Terminal Kaplaması
- TIN COPPER
- Collectoremitter Breakdown Voltage
- 32V
- Pin Sayısı
- 3
- Power Dissipation
- 2W
- Kılıf / Paket
- TO-243AA
- Collector Emitter Voltage Vceo
- 32V
- Terminal Sayısı
- 3
- Voltage Rated Dc
- -32V
- Transistor Type
- PNP
- Vcesatmax
- 0.5 V
- Hfemin
- 82
- Max Breakdown Voltage
- 32V
- Dc Current Gain Hfe Min Ic Vce
- 120 @ 100mA 3V
- ECCN Kodu
- EAR99
- Kurşunsuz
- Lead Free
- Gain Bandwidth Product
- 150MHz
- Kurşunsuz Kodu
- yes
- Max Power Dissipation
- 2W
- Transistor Element Material
- SILICON
- Case Connection
- COLLECTOR
- Radyasyon Dayanımı
- No
- Number Of Elements
- 1
- Frekans
- 150MHz
- Emitter Base Voltage Vebo
- -5V
- Ambalaj
- Tape & Reel (TR)
- Tepe Reflow Sıcaklığı (°C)
- 260
- Transition Frequency
- 150MHz
- Tepe Reflow Süresi (maks. sn)
- 10
- Reach Svhc
- No SVHC
- RoHS Durumu
- ROHS3 Compliant
- Element Configuration
- Single
- Temel Parça No
- 2SB1132
- Parça Durumu
- Not For New Designs
- Polaritychannel Type
- PNP
- Max Collector Current
- 1A
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