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Rohm Semiconductor

2SAR583D3FRATL

Single BJT Transistors

RoHS: Compliant

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Specifications

Dc Current Gain Hfe Min Ic Vce
180 @ 1mA, 3V
Package Type
TO-252 (DPAK)
Çalışma Sıcaklığı
150°C (TJ)
Power Max
10 W
Montaj Tipi
Surface Mount
Maks. Çalışma Sıcaklığı
+ 150 C
Transistor Type
PNP
Transistor Polarity
PNP
Ürün Tipi
BJTs - Bipolar Transistors
Dc Current Gain Hfe Max
450 at - 1 mA, - 3 V
Maximum Collector Emitter Voltage
-50 V
Continuous Collector Current
7 A
Fabrika Paket Adedi
2500
Ürün Durumu
Active
Current Collector Cutoff Max
1μA (ICBO)
Montaj Stili
SMD/SMT
Collector Base Voltage Vcbo
50 V
RoHS
Details
Voltage Collector Emitter Breakdown Max
50 V
Collector Emitter Voltage Vceo Max
50 V
Maximum Dc Collector Current
7 A
Dc Collectorbase Gain Hfe Min
180 at - 1 mA, - 3 V
Collectoremitter Saturation Voltage
200 mV
Seri
Automotive, AEC-Q101
Ambalaj
MouseReel
Vce Saturation Max Ib Ic
400mV @ 150mA, 3A
Emitter Base Voltage Vebo
6 V
Configuration
Single
Currentcollector Ic Max
7 A
Kılıf / Paket
TO-252-3, DPak (2 Leads + Tab), SC-63
Pd Power Dissipation
10 W
Technology
Si
Number Of Elements Per Chip
1
Tedarikçi Cihaz Paketi
TO-252
Frequency Transition
230MHz

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