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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Montaj Tipi
- Surface Mount
- Hfemin
- 120
- Power Max
- 150mW
- Transistor Type
- PNP
- Max Breakdown Voltage
- 20V
- Çalışma Sıcaklığı
- 150°C TJ
- JESD-609 Kodu
- e2
- Dc Current Gain Hfe Min Ic Vce
- 120 @ 1mA 2V
- Qualification Status
- Not Qualified
- Collector Emitter Voltage Vceo
- 300mV
- Terminal Sayısı
- 3
- Max Collector Current
- 200mA
- Max Power Dissipation
- 150mW
- Kurşunsuz Kodu
- yes
- Current Collector Cutoff Max
- 100nA ICBO
- Transistor Element Material
- SILICON
- Montaj
- Surface Mount
- Terminal Pozisyonu
- DUAL
- Continuous Collector Current
- -200mA
- Contact Plating
- Tin
- Collector Base Voltage Vcbo
- -20V
- Gain Bandwidth Product
- 350MHz
- Kurşunsuz
- Lead Free
- ECCN Kodu
- EAR99
- Tepe Reflow Süresi (maks. sn)
- 10
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Formu
- FLAT
- Element Configuration
- Single
- RoHS Durumu
- ROHS3 Compliant
- Yayın Yılı
- 2010
- Jesd30 Code
- R-PDSO-F3
- Number Of Elements
- 1
- Emitter Base Voltage Vebo
- -5V
- Transistor Application
- SWITCHING
- Ambalaj
- Cut Tape (CT)
- Vce Saturation Max Ib Ic
- 300mV @ 10mA, 100mA
- Collectoremitter Saturation Voltage
- -120mV
- Tepe Reflow Sıcaklığı (°C)
- 260
- Transition Frequency
- 350MHz
- Pin Sayısı
- 3
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