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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Montaj
- Through Hole
- Current Collector Cutoff Max
- 1μA ICBO
- Max Power Dissipation
- 1W
- Transistor Element Material
- SILICON
- HTS Kodu
- 8541.29.00.75
- Gain Bandwidth Product
- 310MHz
- ECCN Kodu
- EAR99
- Collector Base Voltage Vcbo
- 60V
- Dc Current Gain Hfe Min Ic Vce
- 120 @ 100mA 2V
- Transistor Type
- PNP
- Montaj Tipi
- Through Hole
- JESD-609 Kodu
- e1
- Çalışma Sıcaklığı
- 150°C TJ
- Max Collector Current
- 2A
- Qualification Status
- Not Qualified
- Collector Emitter Voltage Vceo
- 500mV
- Terminal Sayısı
- 3
- Kılıf / Paket
- 3-SIP
- Currentcollector Ic Max
- 2A
- Polaritychannel Type
- PNP
- Parça Durumu
- Obsolete
- Pin Sayısı
- 3
- Collectoremitter Breakdown Voltage
- 60V
- Terminal Kaplaması
- TIN SILVER COPPER
- RoHS Durumu
- ROHS3 Compliant
- Element Configuration
- Single
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Tepe Reflow Süresi (maks. sn)
- 10
- Vce Saturation Max Ib Ic
- 500mV @ 100mA, 1A
- Ambalaj
- Tape & Box (TB)
- Transition Frequency
- 310MHz
- Tepe Reflow Sıcaklığı (°C)
- 260
- Number Of Elements
- 1
- Jesd30 Code
- R-PSIP-T3
- Yayın Yılı
- 2011
- Transistor Application
- SWITCHING
- Emitter Base Voltage Vebo
- 6V
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