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2SA2007E

ROHM Semiconductor

2SA2007E

Single BJT Transistors

RoHS: Compliant

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Specifications

Collectoremitter Breakdown Voltage
60V
Currentcollector Ic Max
12A
Kılıf / Paket
TO-220-3 Full Pack
Fabrika Tedarik Süresi
7 Weeks
Parça Durumu
Not For New Designs
Collectoremitter Saturation Voltage
-300mV
Vce Saturation Max Ib Ic
500mV @ 400mA, 8A
Ambalaj
Bulk
Emitter Base Voltage Vebo
-5V
Yayın Yılı
1999
Element Configuration
Single
RoHS Durumu
ROHS3 Compliant
Nem Hassasiyeti (MSL)
1 (Unlimited)
Gain Bandwidth Product
80MHz
Kurşunsuz
Lead Free
Collector Base Voltage Vcbo
-100V
Pin Sayısı
3
Continuous Collector Current
-12A
Montaj
Through Hole
Max Power Dissipation
25W
Current Collector Cutoff Max
10μA ICBO
Max Collector Current
12A
Collector Emitter Voltage Vceo
500mV
Dc Current Gain Hfe Min Ic Vce
320 @ 2A 2V
Çalışma Sıcaklığı
150°C TJ
Hfemin
160
Montaj Tipi
Through Hole
Transistor Type
PNP

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