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RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Kurşunsuz Kodu
- yes
- Max Power Dissipation
- 1W
- Radyasyon Dayanımı
- No
- Max Frequency
- 80MHz
- ECCN Kodu
- EAR99
- Kurşunsuz
- Lead Free
- Gain Bandwidth Product
- 80MHz
- Max Breakdown Voltage
- 60V
- Hfemin
- 120
- Transistor Type
- PNP
- Dc Current Gain Hfe Min Ic Vce
- 120 @ 1A 2V
- Terminal Sayısı
- 2
- Collector Emitter Voltage Vceo
- 60V
- Voltage Rated Dc
- -60V
- Genişlik
- 5.5mm
- Pin Sayısı
- 3
- Kılıf / Paket
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Kaplaması
- Tin/Copper (Sn98Cu2)
- Collectoremitter Breakdown Voltage
- 60V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Formu
- GULL WING
- Transistor Application
- SWITCHING
- Yayın Yılı
- 2000
- Vce Saturation Max Ib Ic
- 500mV @ 200mA, 4A
- HTS Kodu
- 8541.29.00.75
- Current Collector Cutoff Max
- 10μA ICBO
- Pin Sayısı
- 3
- Contact Plating
- Copper, Tin
- Continuous Collector Current
- -5A
- Montaj
- Surface Mount
- Collector Base Voltage Vcbo
- 100V
- Çalışma Sıcaklığı
- 150°C TJ
- JESD-609 Kodu
- e2
- Montaj Tipi
- Surface Mount
- Akım Değeri
- -5A
- Max Collector Current
- 5A
- Fabrika Tedarik Süresi
- 20 Weeks
- Polaritychannel Type
- PNP
- Parça Durumu
- Not For New Designs
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