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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Type
- PNP
- Vcesatmax
- 0.35 V
- Hfemin
- 82
- Montaj Tipi
- Surface Mount
- JESD-609 Kodu
- e2
- Çalışma Sıcaklığı
- 150°C TJ
- Max Breakdown Voltage
- 50V
- Dc Current Gain Hfe Min Ic Vce
- 82 @ 500mA 2V
- Akım Değeri
- -3A
- Collector Emitter Voltage Vceo
- 50V
- Terminal Sayısı
- 3
- Max Collector Current
- 3A
- Voltage Rated Dc
- -50V
- Current Collector Cutoff Max
- 100nA ICBO
- Max Power Dissipation
- 2W
- Transistor Element Material
- SILICON
- Montaj
- Surface Mount
- Case Connection
- COLLECTOR
- Contact Plating
- Copper, Tin
- Pin Sayısı
- 4
- Radyasyon Dayanımı
- No
- Collector Base Voltage Vcbo
- 50V
- Kurşunsuz
- Lead Free
- Gain Bandwidth Product
- 200MHz
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Tepe Reflow Süresi (maks. sn)
- 10
- Terminal Formu
- FLAT
- RoHS Durumu
- ROHS3 Compliant
- Element Configuration
- Single
- Number Of Elements
- 1
- Yayın Yılı
- 2006
- Jesd30 Code
- R-PSSO-F3
- Frekans
- 200MHz
- Transistor Application
- AMPLIFIER
- Emitter Base Voltage Vebo
- -6V
- Ambalaj
- Tape & Reel (TR)
- Vce Saturation Max Ib Ic
- 350mV @ 50mA, 1A
- Transition Frequency
- 200MHz
- Tepe Reflow Sıcaklığı (°C)
- 260
- Parça Durumu
- Not For New Designs
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