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RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Type
- PNP
- Element Configuration
- Single
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- 150°C TJ
- Transistor Application
- AMPLIFIER
- Max Breakdown Voltage
- 50V
- Max Collector Current
- 150mA
- Contact Plating
- Copper, Silver, Tin
- Radyasyon Dayanımı
- No
- Voltage Rated Dc
- -50V
- Collectoremitter Breakdown Voltage
- 50V
- Max Power Dissipation
- 200mW
- Ambalaj
- Tape & Reel (TR)
- Montaj
- Surface Mount
- Terminal Pozisyonu
- DUAL
- Terminal Sayısı
- 3
- Collector Emitter Voltage Vceo
- 50V
- Transition Frequency
- 140MHz
- Hfemin
- 120
- Akım Değeri
- -150mA
- Collector Base Voltage Vcbo
- 60V
- Kurşunsuz Kodu
- yes
- Polaritychannel Type
- PNP
- Pin Sayısı
- 3
- Tepe Reflow Süresi (maks. sn)
- 10
- Vce Saturation Max Ib Ic
- 500mV @ 5mA, 50mA
- Fabrika Tedarik Süresi
- 13 Weeks
- JESD-609 Kodu
- e1
- Terminal Formu
- GULL WING
- Transistor Element Material
- SILICON
- Temel Parça No
- 2SA1037
- Parça Durumu
- Active
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Yayın Yılı
- 2009
- Number Of Elements
- 1
- Montaj Tipi
- Surface Mount
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vcesatmax
- 0.5 V
- Frekans
- 140MHz
- Current Collector Cutoff Max
- 100nA ICBO
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