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Specifications
- Power Dissipation
- 202mW
- JESD-609 Kodu
- e3
- Transistor Application
- SWITCHING
- Qualification Status
- COMMERCIAL
- Nem Hassasiyeti (MSL)
- 3 (168 Hours)
- Kurşunsuz Kodu
- yes
- Resistor Base R1
- 4.7 k Ω
- Element Configuration
- Single
- Terminal Sayısı
- 3
- Akım Değeri
- -100mA
- Power Max
- 202mW
- Additional Feature
- BUILT-IN BIAS RESISTOR
- Configuration
- SINGLE WITH BUILT-IN RESISTOR
- HTS Kodu
- 8541.21.00.95
- Maks. Çalışma Sıcaklığı
- 150°C
- Collectoremitter Breakdown Voltage
- 50V
- Polaritychannel Type
- PNP
- ECCN Kodu
- EAR99
- Terminal Formu
- GULL WING
- Hfemin
- 160
- Max Power Dissipation
- 202mW
- Temel Parça No
- MUN51**T
- Montaj Tipi
- Surface Mount
- Kurşunsuz
- Contains Lead
- Yüzey Montaj
- YES
- Currentcollector Ic Max
- 100mA
- Tepe Reflow Süresi (maks. sn)
- 40
- Yayın Yılı
- 2009
- Dc Current Gain Hfe Min Ic Vce
- 160 @ 5mA 10V
- Ambalaj
- Tape & Reel (TR)
- Pin Sayısı
- 3
- Vce Saturation Max Ib Ic
- 250mV @ 1mA, 10mA
- REACH Uyumluluk Kodu
- unknown
- Current Collector Cutoff Max
- 500nA
- Collector Emitter Voltage Vceo
- 250mV
- Transistor Type
- PNP - Pre-Biased
- Terminal Kaplaması
- MATTE TIN
- Kılıf / Paket
- SC-70, SOT-323
- Transistor Element Material
- SILICON
- Max Collector Current
- 100mA
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