Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Akım Değeri
- 100mA
- Hfemin
- 56
- Additional Feature
- BUILT IN BIAS RESISTOR RATIO IS 0.46
- Dc Current Gain Hfe Min Ic Vce
- 56 @ 5mA 5V
- Power Dissipation
- 200mW
- Kurşunsuz Kodu
- yes
- Terminal Formu
- FLAT
- Number Of Elements
- 1
- Kurşunsuz
- Lead Free
- Frequency Transition
- 250MHz
- Ürün Durumu
- Obsolete
- RoHS Durumu
- ROHS3 Compliant
- Continuous Collector Current
- 100mA
- Reach Svhc
- No SVHC
- Polarity
- NPN
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Polaritychannel Type
- NPN
- Ambalaj
- Tape & Reel (TR)
- Resistor Emitter Base R2
- 22 k Ω
- Voltage Rated Dc
- 40V
- Collectoremitter Breakdown Voltage
- 50V
- Configuration
- SINGLE WITH BUILT-IN RESISTOR
- Pin Sayısı
- 3
- Maks. Çalışma Sıcaklığı
- 150°C
- Transition Frequency
- 250MHz
- Power Max
- 200mW
- Montaj
- Surface Mount
- JESD-609 Kodu
- e3
- Max Breakdown Voltage
- 50V
- Transistor Application
- SWITCHING
- Tepe Reflow Sıcaklığı (°C)
- 260
- Jesd30 Code
- R-PDSO-F3
- Current Collector Cutoff Max
- 100nA ICBO
- Min. Çalışma Sıcaklığı
- -55°C
- Currentcollector Ic Max
- 100mA
- Transistor Element Material
- SILICON
- Parça Durumu
- Obsolete
- Terminal Kaplaması
- MATTE TIN
- Collector Emitter Voltage Vceo
- 50V
- Tepe Reflow Süresi (maks. sn)
- 30
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