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FJN4314RBU

Rochester Electronics, LLC

FJN4314RBU

Pre-Biased BJT Transistors

In StockRoHS: Compliant

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Compliant

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Specifications

Transition Frequency
200MHz
Qualification Status
COMMERCIAL
Lead Free Status Rohs Status
Lead free / RoHS Compliant
Continuous Collector Current
-100mA
Yüzey Montaj
NO
Polaritychannel Type
PNP
Max Power Dissipation
300mW
Kılıf / Paket
TO-226-3, TO-92-3 (TO-226AA)
Montaj
Through Hole
Polarity
PNP
Pin Sayısı
3
Pin Sayısı
3
Jesd30 Code
O-PBCY-T3
RoHS Durumu
ROHS3 Compliant
Max Collector Current
100mA
Element Configuration
Single
Dc Current Gain Hfe Min Ic Vce
68 @ 5mA 5V
Voltage Collector Emitter Breakdown Max
50V
Kurşunsuz
Lead Free
Terminal Pozisyonu
BOTTOM
Ürün Durumu
Obsolete
Additional Feature
BUILT IN BIAS RESISTOR RATIO IS 10
Collectoremitter Breakdown Voltage
50V
Currentcollector Ic Max
100mA
Terminal Sayısı
3
Emitter Base Voltage Vebo
-10V
Resistor Emitter Base R2
47 k Ω
Transistor Type
PNP - Pre-Biased
Min. Çalışma Sıcaklığı
-55°C
Nem Hassasiyeti (MSL)
1 (Unlimited)
Power Dissipation
300mW
Collector Emitter Voltage Vceo
50V
Terminal Kaplaması
MATTE TIN
Configuration
SINGLE WITH BUILT-IN RESISTOR
Vce Saturation Max Ib Ic
300mV @ 500μA, 10mA
Resistor Base R1
4.7 k Ω
Tepe Reflow Sıcaklığı (°C)
NOT APPLICABLE
Hfemin
68
Voltage Rated Dc
-50V
Transistor Application
SWITCHING

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