Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Dc Current Gain Hfe Min Ic Vce
- 56 @ 5mA 5V
- Voltage Collector Emitter Breakdown Max
- 50V
- Kurşunsuz
- Lead Free
- Temel Parça No
- FJN4303
- Terminal Pozisyonu
- BOTTOM
- Collectoremitter Breakdown Voltage
- 50V
- Additional Feature
- BUILT-IN BIAS RESISTOR RATIO IS 1
- Ürün Durumu
- Obsolete
- Currentcollector Ic Max
- 100mA
- Emitter Base Voltage Vebo
- -10V
- Terminal Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Min. Çalışma Sıcaklığı
- -55°C
- Transistor Type
- PNP - Pre-Biased
- Resistor Emitter Base R2
- 22 k Ω
- Transition Frequency
- 200MHz
- Continuous Collector Current
- -100mA
- Yüzey Montaj
- NO
- Qualification Status
- COMMERCIAL
- Polaritychannel Type
- PNP
- Montaj
- Through Hole
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Max Power Dissipation
- 300mW
- Polarity
- PNP
- Pin Sayısı
- 3
- Element Configuration
- Single
- Max Collector Current
- 100mA
- RoHS Durumu
- ROHS3 Compliant
- Jesd30 Code
- O-PBCY-T3
- Akım Değeri
- -100mA
- Paket
- Bulk
- Power Max
- 300mW
- Ambalaj
- Bulk
- Montaj Tipi
- Through Hole
- REACH Uyumluluk Kodu
- unknown
- Tedarikçi Cihaz Paketi
- TO-92-3
- Parça Durumu
- Obsolete
- Tepe Reflow Süresi (maks. sn)
- NOT APPLICABLE
- Transistor Element Material
- SILICON
- Maks. Çalışma Sıcaklığı
- 150°C
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