Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Maks. Çalışma Sıcaklığı
- 150°C
- Tepe Reflow Süresi (maks. sn)
- NOT APPLICABLE
- Transistor Element Material
- SILICON
- Parça Durumu
- Obsolete
- Tedarikçi Cihaz Paketi
- TO-92-3
- Montaj Tipi
- Through Hole
- Ambalaj
- Tape & Box (TB)
- Power Max
- 300mW
- Paket
- Bulk
- Akım Değeri
- 100mA
- Frequency Transition
- 250MHz
- Kurşunsuz Kodu
- yes
- JESD-609 Kodu
- e3
- Voltage Rated Dc
- 50V
- Transistor Application
- SWITCHING
- Vce Saturation Max Ib Ic
- 300mV @ 500μA, 10mA
- Resistor Base R1
- 47 k Ω
- Tepe Reflow Sıcaklığı (°C)
- NOT APPLICABLE
- Hfemin
- 68
- Terminal Kaplaması
- MATTE TIN
- Configuration
- SINGLE WITH BUILT-IN RESISTOR
- Power Dissipation
- 300mW
- Collector Emitter Voltage Vceo
- 50V
- Current Collector Cutoff Max
- 100nA ICBO
- Number Of Elements
- 1
- Terminal Pozisyonu
- BOTTOM
- Kurşunsuz
- Lead Free
- Voltage Collector Emitter Breakdown Max
- 50V
- Dc Current Gain Hfe Min Ic Vce
- 68 @ 5mA 5V
- Resistor Emitter Base R2
- 47 k Ω
- Transistor Type
- NPN - Pre-Biased
- Min. Çalışma Sıcaklığı
- -55°C
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Sayısı
- 3
- Emitter Base Voltage Vebo
- 10V
- Currentcollector Ic Max
- 100mA
- Additional Feature
- BUILT IN BIAS RESISTOR RATIO IS 1
- Ürün Durumu
- Obsolete
- Collectoremitter Breakdown Voltage
- 50V
- Max Power Dissipation
- 300mW
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