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Specifications
- Resistor Emitter Base R2
- 47 k Ω
- Voltage Rated Dc
- -50V
- Power Max
- 200mW
- Voltage Collector Emitter Breakdown Max
- 50V
- Collector Emitter Voltage Vceo
- 250mV
- Polaritychannel Type
- PNP
- Hfemin
- 80
- Pin Sayısı
- 3
- Current Collector Cutoff Max
- 500nA
- Terminal Pozisyonu
- DUAL
- Ambalaj
- Tape & Reel (TR)
- Number Of Elements
- 1
- Maks. Çalışma Sıcaklığı
- 150°C
- REACH Uyumluluk Kodu
- unknown
- Tepe Reflow Sıcaklığı (°C)
- 240
- Yüzey Montaj
- YES
- JESD-609 Kodu
- e0
- Resistor Base R1
- 47 k Ω
- Vce Saturation Max Ib Ic
- 250mV @ 300μA, 10mA
- Power Dissipation
- 200mW
- Transistor Application
- SWITCHING
- Min. Çalışma Sıcaklığı
- -55°C
- Tepe Reflow Süresi (maks. sn)
- 30
- ECCN Kodu
- EAR99
- Terminal Sayısı
- 3
- Additional Feature
- BUILT-IN BIAS RESISTOR RATIO IS 1
- Pin Sayısı
- 3
- Kılıf / Paket
- SC-75, SOT-416
- Montaj Tipi
- Surface Mount
- Collectoremitter Breakdown Voltage
- 50V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Currentcollector Ic Max
- 100mA
- Terminal Formu
- GULL WING
- Kurşunsuz Kodu
- no
- Transistor Element Material
- SILICON
- Dc Current Gain Hfe Min Ic Vce
- 80 @ 5mA 10V
- Max Power Dissipation
- 200mW
- Kurşunsuz
- Contains Lead
- Jesd30 Code
- R-PDSO-G3
- Transistor Type
- PNP - Pre-Biased
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