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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Qualification Status
- COMMERCIAL
- Max Frequency
- 300MHz
- Vce Saturation Max Ib Ic
- 250mV @ 5mA, 50mA
- Current Collector Cutoff Max
- 100nA ICBO
- Parça Durumu
- Obsolete
- Pin Sayısı
- 3
- Transistor Application
- AMPLIFIER
- RoHS Durumu
- Non-RoHS Compliant
- JESD-609 Kodu
- e1
- Polaritychannel Type
- NPN
- Montaj
- Through Hole
- Gain Bandwidth Product
- 300MHz
- Voltage Rated Dc
- 140V
- Emitter Base Voltage Vebo
- 6V
- Element Configuration
- Single
- Terminal Sayısı
- 3
- Configuration
- SINGLE
- Number Of Elements
- 1
- Kurşunsuz Kodu
- yes
- Ambalaj
- Bulk
- Pin Sayısı
- 3
- Tedarikçi Cihaz Paketi
- TO-92-3
- Transistor Type
- NPN
- Yayın Yılı
- 2006
- Jesd30 Code
- O-PBCY-T3
- Transistor Element Material
- SILICON
- Power Dissipation
- 625mW
- Transition Frequency
- 100MHz
- Tepe Reflow Sıcaklığı (°C)
- 260
- Currentcollector Ic Max
- 600mA
- Max Power Dissipation
- 625mW
- Voltage Collector Emitter Breakdown Max
- 140V
- Hfemin
- 60
- Collectoremitter Breakdown Voltage
- 140V
- Terminal Pozisyonu
- BOTTOM
- Akım Değeri
- 600mA
- Collector Base Voltage Vcbo
- 160V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Kaplaması
- TIN SILVER COPPER
- Power Max
- 625mW
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