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Rochester Electronics

P1086_Q

JFETs Transistors

In StockRoHS: Compliant

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Compliant

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Specifications

Power Dissipation
350 mW
Element Configuration
Single
RoHS
Non-Compliant
Continuous Drain Current Id
10 nA
Drain To Source Breakdown Voltage
-30 V
Max Power Dissipation
350 mW
Ambalaj
Bulk
Drain To Source Voltage Vdss
-30 V
Drain To Source Resistance
75 Ω
Gate To Source Voltage Vgs
30 V

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