NP50N04YUK-E1-AY

Specifications

Genişlik

5 mm

Çalışma Sıcaklığı

175°C

Transistor Application

SWITCHING

Manufacturer Package Code

PLSN0008KA-A8

Configuration

SINGLE WITH BUILT-IN DIODE

Ürün Durumu

Active

Uzunluk

5.4 mm

Montaj Tipi

Surface Mount

Terminal Formu

FLAT

Risk Rank

5.7

Package Shape

RECTANGULAR

Kılıf / Paket

8-PowerLDFN

Number Of Elements

1

Pin Sayısı

8

Yükseklik

1.45 mm

Drain To Source Voltage Vdss

40 V

Ürün Tipi

MOSFET

Case Connection

DRAIN

Package Style

SMALL OUTLINE

Package Body Material

PLASTIC/EPOXY

Input Capacitance Ciss Max Vds

3200 pF @ 25 V

Gate Charge Qg Max Vgs

57 nC @ 10 V

Jesd30 Code

R-PDSO-F5

Transistor Element Material

SILICON

Drain Currentmax Id

50 A

Part Package Code

HSON

RoHS

Details

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Ambalaj

Cut Tape

Yüzey Montaj

YES

Vgsth Max Id

4V @ 250μA

Drive Voltage Max Rds On Min Rds On

10V

Brand Name

Renesas

Vgs Max

±20V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ds Breakdown Voltagemin

40 V

Fet Type

N-Channel

Power Dissipation Max

1W (Ta), 97W (Tc)

REACH Uyumluluk Kodu

compliant

Feedback Capmax Crss

240 pF