NP35N04YLG-E1-AY

Specifications

Ambalaj

Tube

Yüzey Montaj

YES

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Power Dissipationmax Abs

77 W

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vgsth Max Id

2.5V @ 250μA

Drive Voltage Max Rds On Min Rds On

5V, 10V

Brand Name

Renesas

Vgs Max

±20V

Feedback Capmax Crss

220 pF

Power Dissipation Max

1W (Ta), 77W (Tc)

Additional Feature

LOGIC LEVEL COMPATIBLE

REACH Uyumluluk Kodu

compliant

Ds Breakdown Voltagemin

40 V

Fet Type

N-Channel

Rohs Code

Yes

Terminal Pozisyonu

DUAL

Part Life Cycle Code

Not Recommended

Number Of Terminals

5

Tedarikçi Cihaz Paketi

8-HSON

Package Description

LEAD FREE, HSON-8

Drainsource On Resistancemax

0.015 Ω

Rds On Max Id Vgs

9.7mOhm @ 17.5A, 10V

Reflow Temperaturemax S

NOT SPECIFIED

Üretici Parça No

NP35N04YLG-E1-AY

Operating Temperaturemax

175 °C

Ihs Manufacturer

RENESAS ELECTRONICS CORP

Polaritychannel Type

N-CHANNEL

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

35A (Tc)

Fabrika Paket Adedi

2500

Manufacturer Package Code

PLSN0008KA-A8

Configuration

SINGLE WITH BUILT-IN DIODE

Ürün Durumu

Active

Çalışma Sıcaklığı

175°C

Transistor Application

SWITCHING

Genişlik

5 mm

Package Shape

RECTANGULAR

Terminal Formu

FLAT

Risk Rank

5.7