H5N2521FN-E#T2

Specifications

Drain Currentmax Abs Id

3 A

Operating Temperaturemax

150 °C

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

2.2 Ω

Üretici Parça No

H5N2521FN-E-T2

Package Shape

RECTANGULAR

Terminal Pozisyonu

SINGLE

Power Dissipationmax Abs

20 W

Transistor Element Material

SILICON

Number Of Terminals

3

Part Life Cycle Code

Obsolete

Configuration

SINGLE WITH BUILT-IN DIODE

Drain Currentmax Id

3 A

Yüzey Montaj

NO

REACH Uyumluluk Kodu

unknown

Risk Rank

5.84

Reflow Temperaturemax S

NOT SPECIFIED

Package Body Material

PLASTIC/EPOXY

Package Description

FLANGE MOUNT, R-PSFM-T3

Terminal Formu

THROUGH-HOLE

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

250 V

Part Package Code

TO-220FN

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Number Of Elements

1

Pin Sayısı

3

Case Connection

ISOLATED

Package Style

FLANGE MOUNT

Rohs Code

Yes

Ihs Manufacturer

RENESAS ELECTRONICS CORP

Ürün Durumu

Active

Seri

*

Jesd30 Code

R-PSFM-T3

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Paket

Bulk

Pulsed Drain Currentmax Idm

6 A

Polaritychannel Type

N-CHANNEL

Qualification Status

Not Qualified