Volume pricing
- 1+ pcs$1.98
- 10+ pcs$1.87
- 100+ pcs$1.76
- 500+ pcs$1.66
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Pulsed Drain Currentmax Idm
- 120A
- Pin Sayısı
- 8
- Drain To Source Voltage Vdss
- 30V
- Terminal Pozisyonu
- DUAL
- Kurşunsuz
- Lead Free
- Rds On Max Id Vgs
- 6.5m Ω @ 15A, 10V
- Avalanche Energy Rating Eas
- 11 mJ
- Montaj Tipi
- Surface Mount
- Çalışma Sıcaklığı
- 150°C TJ
- Operating Mode
- ENHANCEMENT MODE
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Formu
- NO LEAD
- Kurşunsuz Kodu
- yes
- Continuous Drain Current Id
- 30A
- Gate Charge Qg Max Vgs
- 10.4nC @ 4.5V
- Fet Type
- N-Channel
- Input Capacitance Ciss Max Vds
- 1890pF @ 10V
- Kılıf / Paket
- 8-WFDFN Exposed Pad
- Power Dissipation Max
- 30W Tc
- Terminal Sayısı
- 5
- Montaj
- Surface Mount
- Pin Sayısı
- 8
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Case Connection
- DRAIN
- Transistor Application
- SWITCHING
- Fabrika Tedarik Süresi
- 16 Weeks
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Yayın Yılı
- 2013
- RoHS Durumu
- ROHS3 Compliant
- Vgs Max
- ±20V
- Ds Breakdown Voltagemin
- 30V
- Parça Durumu
- Active
- Jesd30 Code
- R-PDSO-N5
- Ambalaj
- Tape & Reel (TR)
- Current Continuous Drain Id25
- 30A Ta
- Number Of Elements
- 1
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
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