NP100P04PDG-E1-AY

Specifications

Vgsth Max Id

2.5V @ 1mA

Terminal Formu

GULL WING

Number Of Elements

1

Jesd30 Code

R-PSSO-G2

Transistor Element Material

SILICON

Parça Durumu

Active

Power Dissipation

1.8W

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Montaj Tipi

Surface Mount

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Ds Breakdown Voltagemin

40V

Operating Mode

ENHANCEMENT MODE

Rds On Max Id Vgs

3.5m Ω @ 50A, 10V

Turn Off Delay Time

300 ns

Kurşunsuz

Lead Free

Current Continuous Drain Id25

100A Tc

Input Capacitance Ciss Max Vds

15100pF @ 10V

Terminal Pozisyonu

SINGLE

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Pin Sayısı

3

Rise Time

30ns

Radyasyon Dayanımı

No

Power Dissipation Max

1.8W Ta 200W Tc

Drain To Source Voltage Vdss

40V

Continuous Drain Current Id

100A

Terminal Sayısı

2

Vgs Max

±20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

100 ns

Ambalaj

Tape & Reel (TR)

Çalışma Sıcaklığı

175°C TJ

Gate To Source Voltage Vgs

20V

Gate Charge Qg Max Vgs

320nC @ 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

P-Channel

Contact Plating

Tin

Fabrika Tedarik Süresi

16 Weeks

Avalanche Energy Rating Eas

550 mJ

Montaj

Surface Mount