HAT2199R-EL-E

Specifications

Yüzey Montaj

YES

Fet Type

N-Channel

Package Description

SMALL OUTLINE, R-PDSO-G8

Risk Rank

5.79

Manufacturer Package Code

PRSP0008DD-D8

Configuration

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Levels

1

Part Life Cycle Code

Obsolete

Power Dissipation Max

2W (Ta)

Package Shape

RECTANGULAR

REACH Uyumluluk Kodu

compliant

Ihs Manufacturer

RENESAS ELECTRONICS CORP

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Number Of Terminals

8

Ürün Durumu

Obsolete

Transistor Application

SWITCHING

Terminal Pozisyonu

DUAL

ECCN Kodu

EAR99

Rohs Code

Yes

Tedarikçi Cihaz Paketi

8-SOP

Brand Name

Renesas

Qualification Status

Not Qualified

Drain Currentmax Abs Id

11 A

Number Of Elements

1

Transistor Element Material

SILICON

Gate Charge Qg Max Vgs

7.5 nC @ 4.5 V

Operating Temperaturemax

150 °C

Technology

MOSFET (Metal Oxide)

Terminal Formu

GULL WING

Fabrika Tedarik Süresi

1 Week

Tepe Reflow Sıcaklığı (°C)

260

Rds On Max Id Vgs

16.5mOhm @ 5.5A, 10V

Montaj Tipi

Surface Mount

Polaritychannel Type

N-CHANNEL

Paket

Bulk

Package Style

SMALL OUTLINE

Drain To Source Voltage Vdss

30 V

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-PDSO-G8

Power Dissipationmax Abs

2 W