HAT2165H-EL-E

Specifications

Kurşunsuz Kodu

yes

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSSO-G4

Current Continuous Drain Id25

55A Ta

Drain To Source Voltage Vdss

30V

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

150°C TJ

Input Capacitance Ciss Max Vds

5180pF @ 10V

Pulsed Drain Currentmax Idm

220A

Pin Sayısı

5

Rise Time

65ns

Case Connection

DRAIN

Continuous Drain Current Id

55A

Ds Breakdown Voltagemin

30V

Terminal Formu

GULL WING

Terminal Sayısı

4

Fabrika Tedarik Süresi

16 Weeks

Pin Sayısı

5

Gate Charge Qg Max Vgs

33nC @ 4.5V

Tepe Reflow Sıcaklığı (°C)

260

Montaj Tipi

Surface Mount

Parça Durumu

Not For New Designs

Rds On Max Id Vgs

3.3m Ω @ 27.5A, 10V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Kurşunsuz

Lead Free

JESD-609 Kodu

e4

Turn Off Delay Time

60 ns

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

20

ECCN Kodu

EAR99

Terminal Pozisyonu

SINGLE

Turn On Delay Time

13 ns

Vgsth Max Id

2.5V @ 1mA

Yayın Yılı

2005

Power Dissipation

30W

Montaj

Surface Mount

Contact Plating

Gold

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Fall Time Typ

9.5 ns