2SJ555-E

Specifications

Qualification Status

Not Qualified

JESD-609 Kodu

e2

Üretici Parça No

2SJ555-E

Package Shape

RECTANGULAR

Part Package Code

TO-3P

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Polaritychannel Type

P-CHANNEL

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Number Of Terminals

3

Transistor Element Material

SILICON

Ds Breakdown Voltagemin

60 V

Pulsed Drain Currentmax Idm

240 A

Package Body Material

PLASTIC/EPOXY

Case Connection

DRAIN

Number Of Elements

1

Brand Name

Renesas

Terminal Pozisyonu

SINGLE

Drain Currentmax Abs Id

60 A

Operating Temperaturemax

150 °C

Yüzey Montaj

NO

Drain Currentmax Id

60 A

Risk Rank

5.21

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kurşunsuz Kodu

Yes

Terminal Formu

THROUGH-HOLE

Pin Sayısı

4

Drainsource On Resistancemax

0.036 Ω

Ihs Manufacturer

RENESAS ELECTRONICS CORP

ECCN Kodu

EAR99

Package Style

FLANGE MOUNT

Samacsys Description

2SJ555-E P-Channel MOSFET, 240 A, 60 V, 3-Pin TO-3P Renesas

Moisture Sensitivity Levels

1

Rohs Code

Yes

Reflow Temperaturemax S

NOT SPECIFIED

Manufacturer Package Code

PRSS0004ZE-A4

Jesd30 Code

R-PSFM-T3

Part Life Cycle Code

Not Recommended

Power Dissipationmax Abs

125 W

Transistor Application

SWITCHING