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Support
Technical team support
Specifications
- Current Collector Cutoff Max
- 100nA ICBO
- Continuous Collector Current
- 600 mA
- Collector Emitter Voltage Vceo Max
- 140 V
- Collector Emitter Voltage Vceo
- 140V
- Yayın Yılı
- 2005
- Genişlik
- 1.3mm
- Fabrika Paket Adedi
- 3000
- Pd Power Dissipation
- 225 mW
- Dc Collectorbase Gain Hfe Min
- 60
- Transistor Type
- NPN
- Vce Saturation Max Ib Ic
- 250mV @ 5mA, 50mA
- Technology
- Si
- Dc Current Gain Hfe Min Ic Vce
- 60 @ 10mA 5V
- Standard Package Name
- SOT
- Akım Değeri
- 600mA
- Weight
- 30mg
- Mounting
- Surface Mount
- Collectoremitter Saturation Voltage
- 250 mV
- Max Breakdown Voltage
- 140V
- Currentcollector Ic Max
- 600mA
- Ppap
- No
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gerilim
- Max Collector Current - 0.6A
- Package Length
- 3(Max)
- Uzunluk
- 2.92mm
- Emitter Base Voltage Vebo
- 6 V
- Max Frequency
- 50MHz
- Collector Base Voltage Vcbo
- 160 V
- Maks. Çalışma Sıcaklığı
- + 150 C
- Frekans
- 50MHz
- Configuration
- Single
- Max Power Dissipation
- 350mW
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Automotive
- No
- Polarity
- NPN
- Number Of Elements
- 1
- Ürün Tipi
- BJTs - Bipolar Transistors
- Fabrika Tedarik Süresi
- 14 Weeks
- Max Collector Current
- 600mA
- Package Width
- 1.4(Max)
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