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RoHS
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Specifications
- Seri
- UF3N
- Technology
- SiC
- Configuration
- Single
- Montaj Stili
- SMD/SMT
- Vds Drainsource Breakdown Voltage
- 1.7 kV
- Kılıf / Paket
- D2PAK-7L
- Pd Power Dissipation
- 68 W
- Minimum Operating Temperature
- - 55 C
- Transistor Polarity
- N-Channel
- Rds On Drainsource Resistance
- 400 mOhms
- Maks. Çalışma Sıcaklığı
- + 175 C
- Gatesource Cutoff Voltage
- - 20 V to 3 V
- Id Continuous Drain Current
- 6.8 A
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