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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Genişlik
- 3 mm
- Number Of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Yükseklik
- 0.203 mm
- Shipping Restrictions
- This product may require additional documentation to export from the United States.
- Part Aliases
- TGF2979 1127378
- Maks. Çalışma Sıcaklığı
- + 225 C
- Uzunluk
- 4 mm
- Ambalaj
- Tray
- Operating Frequency
- DC to 12 GHz
- Transistor Type
- HEMT
- Vds Drainsource Breakdown Voltage
- 32 V
- Moisture Sensitive
- Yes
- Birim Ağırlık
- 0.004339 oz
- Configuration
- Single
- Kılıf / Paket
- QFN-20
- Output Power
- 22 W
- Development Kit
- TGF2979-SMEVB1
- Tip
- GaN SiC HEMT
- RoHS
- Details
- Fabrika Paket Adedi
- 50
- Gain
- 11 dB
- Pd Power Dissipation
- 49 W
- Id Continuous Drain Current
- 1.8 A
- Seri
- TGF2979
- Montaj Stili
- SMD/SMT
- Vgs Gatesource Breakdown Voltage
- - 2.7 V
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