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RoHS
Compliant
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Technical team support
Specifications
- Transistor Type
- HEMT
- Id Continuous Drain Current
- 80 mA
- Applications
- Defense and Aerospace, Broadband Wireless
- Pd Power Dissipation
- 8.9 W
- Nf Noise Figure
- 1.3 dB
- Operating Frequency
- DC to 25 GHz
- Gain
- 15 dB
- Minimum Operating Temperature
- - 40 C
- Kılıf / Paket
- DIE
- Montaj Stili
- SMD/SMT
- Configuration
- Single
- Seri
- TGF2933
- Part Aliases
- 1113799 1113799
- Transistor Polarity
- N-Channel
- Fabrika Paket Adedi
- 50
- RoHS
- Details
- Ambalaj
- Gel Pack
- Output Power
- 7.2 W
- Maks. Çalışma Sıcaklığı
- + 85 C
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