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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- NI-360
- Configuration
- Single
- Moisture Sensitive
- Yes
- Vds Drainsource Breakdown Voltage
- 32 V
- Transistor Type
- HEMT
- Operating Temperature Range
- - 40 C to + 85 C
- Operating Frequency
- 3.5 GHz
- Minimum Operating Temperature
- - 40 C
- Ambalaj
- Tray
- Maks. Çalışma Sıcaklığı
- + 85 C
- Part Aliases
- 1118705 1118705
- Shipping Restrictions
- This product may require additional documentation to export from the United States.
- Transistor Polarity
- N-Channel
- Vgs Gatesource Breakdown Voltage
- - 2.9 V
- Montaj Stili
- SMD/SMT
- Seri
- TGF2819
- Id Continuous Drain Current
- 7.32 A
- Pd Power Dissipation
- 86 W
- Gain
- 14 dB
- Fabrika Paket Adedi
- 25
- RoHS
- Details
- Tip
- GaN SiC HEMT
- Development Kit
- TGF2819-FS/FL, EVAL BOARD
- Output Power
- 100 W
- Maximum Drain Gate Voltage
- 145 V
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