Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Development Kit
- T2G6000528-Q3-EVB1, T2G6000528-Q3-EVB3, T2G6000528-Q3-EVB5
- Gain
- 15 dB
- Moisture Sensitive
- Yes
- Montaj Stili
- SMD/SMT
- Pd Power Dissipation
- 12.5 W
- Birim Ağırlık
- 0.260886 oz
- RoHS
- Details
- Applications
- Military Radar, Professional and Military Radio Communications
- Id Continuous Drain Current
- 650 mA
- Kılıf / Paket
- NI-200
- Fabrika Paket Adedi
- 100
- Configuration
- Single
- Transistor Type
- HEMT
- Part Aliases
- T2G6000528 1099997
- Seri
- T2G6000528
- Output Power
- 10 W
- Transistor Polarity
- N-Channel
- Ambalaj
- Tray
- Operating Frequency
- DC to 6 GHz
Related Products
Microsemi
0150SC-1250M
JFETs Transistors
Central Semiconductor Corp
2N2608
JFETs Transistors
Microchip Technology
2N2608UB
JFETs Transistors
Microchip Technology
2N2608UB/TR
JFETs Transistors
Microsemi Corporation
2N2609
JFETs Transistors
Vishay
2N3819
JFETs Transistors
Central Semiconductor
2N3819 APM PBFREE
JFETs Transistors
Rochester Electronics
2N3819_Q
JFETs Transistors