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Support
Technical team support
Specifications
- Id Continuous Drain Current
- 24 A
- Gain
- 18 dB
- Transistor Type
- HEMT
- Moisture Sensitive
- Yes
- Transistor Polarity
- N-Channel
- Pd Power Dissipation
- 288 W
- Fabrika Paket Adedi
- 25
- Operating Frequency
- 2 GHz
- Tip
- GaN SiC HEMT
- Kılıf / Paket
- NI-780
- Maks. Çalışma Sıcaklığı
- + 250 C
- Montaj Stili
- SMD/SMT
- RoHS
- Details
- Vgs Gatesource Breakdown Voltage
- 145 V
- Configuration
- Single
- Output Power
- 260 W
- Ambalaj
- Tray
- Maximum Drain Gate Voltage
- 48 V
- Vds Drainsource Breakdown Voltage
- 36 V
- Part Aliases
- T1G2028536 1110346
- Seri
- T1G2028536
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