Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Tip
- GaN SiC HEMT
- Kılıf / Paket
- NI-780
- Operating Frequency
- 2 GHz
- Fabrika Paket Adedi
- 25
- Pd Power Dissipation
- 288 W
- Transistor Polarity
- N-Channel
- Moisture Sensitive
- Yes
- Birim Ağırlık
- 0.526067 oz
- Gain
- 20.8 dB
- Transistor Type
- HEMT
- Id Continuous Drain Current
- 24 A
- Seri
- T1G2028536
- Part Aliases
- T1G2028536 1111394
- Vds Drainsource Breakdown Voltage
- 36 V
- Ambalaj
- Tray
- Maximum Drain Gate Voltage
- 48 V
- Output Power
- 260 W
- Configuration
- Single
- Maks. Çalışma Sıcaklığı
- + 275 C
- Montaj Stili
- SMD/SMT
- RoHS
- Details
- Vgs Gatesource Breakdown Voltage
- 145 V
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