QPD1019

Specifications

Vds Drainsource Breakdown Voltage

150 V

Pd Power Dissipation

522 W

Minimum Operating Temperature

- 40 C

Gain

16.3 dB

Seri

QPD1019

Vgs Gatesource Breakdown Voltage

- 7 V to 2 V

Configuration

Single

Fabrika Paket Adedi

18

Maks. Çalışma Sıcaklığı

+ 85 C

Montaj Stili

SMD/SMT

Moisture Sensitive

Yes

Transistor Type

HEMT

Kılıf / Paket

17.4 mm x 24 mm x 4.31 mm

Maximum Drain Gate Voltage

55 V

RoHS

Details

Operating Frequency

2.9 GHz to 3.3 GHz

Shipping Restrictions

This product may require additional documentation to export from the United States.

Id Continuous Drain Current

15 A

Transistor Polarity

N-Channel

Development Kit

QPD1019EVB01