QPD1018

Specifications

Gain

17.7 dB

Seri

QPD1018

Vgs Gatesource Breakdown Voltage

- 7 V to 2 V

Minimum Operating Temperature

- 40 C

Vds Drainsource Breakdown Voltage

145 V

Pd Power Dissipation

522 W

Operating Frequency

2.7 GHz to 3.1 GHz

Maximum Drain Gate Voltage

55 V

RoHS

Details

Development Kit

QPD1018EVB

Transistor Polarity

N-Channel

Id Continuous Drain Current

15 A

Shipping Restrictions

This product may require additional documentation to export from the United States.

Maks. Çalışma Sıcaklığı

+ 85 C

Configuration

Single

Fabrika Paket Adedi

18

Kılıf / Paket

17.4 mm x 24 mm x 4.31 mm

Transistor Type

HEMT

Moisture Sensitive

Yes

Montaj Stili

SMD/SMT