QPD1013SR

Specifications

Montaj Stili

SMD/SMT

Moisture Sensitive

Yes

Kılıf / Paket

DFN-6

Transistor Type

HEMT

Maks. Çalışma Sıcaklığı

+ 85 C

Fabrika Paket Adedi

100

Configuration

Single Triple Drain

Id Continuous Drain Current

1.7 A

Birim Ağırlık

0.274843 oz

Output Power

178 W

Transistor Polarity

N-Channel

Development Kit

QPD1013EVB01

Applications

Military Radar, Jammers,Test Instrumentation,Wideband or Narrowband Amplifiers,Land Mobile and Military Radio Communications

RoHS

Details

Maximum Drain Gate Voltage

65 V

Operating Frequency

1.2 GHz to 2.7 GHz

Part Aliases

QPD1013

Pd Power Dissipation

67 W

Minimum Operating Temperature

- 40 C

Seri

QPD1013

Ambalaj

Reel

Gain

21.8 dB